product range

PRODUCT DETAILS

Operating Frequency 1.8 - 1.9 GHz LDMOS
Power Output 20 Watt
Gain 30dB
Operating Voltage 28V
Harmonics -30 dBc max.
Dimensions 118 x 100 x 22 mm

GENERAL DESCRIPTION

This highly efficient 1.8-1.9 GHz high power broadband LDMOS amplifier is suitable for EW systems

PRODUCT DETAILS

Operating Frequency 900 - 980 MHz
Psat 47 dBm
Power Flatness ± 0.5 dB@ 47 dBm
Gain > 32 dB
Supply Current @ 50 W 5.5 A (max)
Efficiency % @ 50 W 33 minimum
Harmonics -30 dBc (max)
Dimensions 118 x 200 x 22 mm

RF Connectors  SMA

GENERAL DESCRIPTION

900 - 980 MHz is an LDMOS narrowband power amplifier that provides excellent power density, high efficiency and long term reliability. This devices provides a minimum of 50W of RF power for the 900 MHz GSM band, with in-built temperature compensation and forward and reverse power monitoring. The high reliability and compact size of this module makes it suitable for mobile military and test applications.

PRODUCT DETAILS

Operating Frequency 5.2 - 6.0 GHz
Power Output 50 Watts
Saturated Power 
Efficiency
Gain 
Gain Flatness 
Current Consumption 
Dimensions

GENERAL DESCRIPTION

This is a high power XBand GaAs amplifier/source that provides excellent power densityand long term reliability. This device provides 50W of RF power and designed for harsh environments mak-ing it suitable for mobile military and test applications.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz
Efficiency at Psat 40%
Power Output @ P1dB 16 Watts
Small Signal Gain Flatness ± 2.5 dB
Operating Voltage + 28V
Operating Volatage - -4.5 to -5.5 V
Typical Supply Current @Psat 3.0 Amp
Dimensions 120 x 65 x 25 mm
RF Connectors SMA

GENERAL DESCRIPTION

0.5 - 2.5 GHz is a broadband GaN power amplifier that provides excellent power density, high efficiency and long term reliability. This device provides 16W (P1dB) of RF power from below GSM, through to PCN/PCS and above. The high reliability and light weight of this module makes it suitable for military and test applications.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz
Saturated Power 30 Watts @ Psat
Operating Voltage 28V
Efficiency
Gain 45 dB

DESCRIPTION

A broadband GaN high power amplifier, high reliability and light weight makes it suitable for military and test applications.

PRODUCT DETAILS

Operating Frequency 1.15 - 2.55 GHz
Power Output (OFDM) 1 Watt
Small Signal Gain Flatness ± 1 dB
Operating Voltage + 10 to 14V
Supply Current @ 1 W 0.7 Amp
dimensions 97 x 48 x 11 mm
RF Connectors SMA

GENERAL DESCRIPTION

A nominal 1 Watt (wideband) linear booster amplifier has been designed using GaAs device technology for QPSK/QAM modulation schemes and operating over the 1.15 to 2.55GHz frequency band. The amplifier incorporates a failsafe RF bypass path (path loss = 1dB typical) which operates when the amplifier is de-enabled or switched off at supply.

PRODUCT DETAILS

Operating Frequency 1.8 - 2.0 GHz
Psat 45 dBm
Small Signal Gain Flatness ± 1.0 dB@ 44 dBm
Operating Voltage 28 V
Supply Current 5A (max)
Harmonics -40 dBc (typical)
Dimensions 118 x 200 x 23 mm
RF Conectors SMA

GENERAL DESCRIPTION

This is a narrowband power amplifier that provides excellent power density, high efficiency and long term reliability. This device provides >35W (Psat) of RF power for PCS band, along with in-built temperature compensation and forward / reverse monitoring. The high reliability and compact size of this module makes it suitable for mobile military and test applications.

PRODUCT DETAILS

Operating Frequency 2.11 - 2.17 GHz
Psat 45 dBm
Small Signal Gain Flatness ± 1.0 dB@ 44 dBm
Operating Voltage 28 V
Supply Current 5A (max)
Harmonics -40 dBc typical
dimensions 118 x 200 x 24 mm
RF Connectors SMA

GENERAL DESCRIPTION

This is a narrowband GaAs power amplifier that provides excellent power density, high efficiency and long term reliability. This devices provides >35W (Psat) of RF power for lowest 3G band, along with in-built temperature compensation and forward & reverse monitoring. The high reliability and compact size of this module makes it suitable for mobile military and test applications.

PRODUCT DETAILS

Operating Frequency 2.4 - 2.5 GHz
Psat 45 dBm
Small Signal Gain Flatness ± 1.0 dB@ 44 dBm
Operating Voltage 28 V
Supply Current 5A (max)
Harmonics -40 dBc (typical)
Dimensions 118 x 200 x 25 mm
RF Connectors SMA

GENERAL DESCRIPTION

This is a narrowband power amplifier that provides excellent power density, high efficiency and long term reliability. This device provides >35W (Psat) of RF power for WiFi/WiMAX band, along with in-built temperature compensation and forward & reverse monitoring. The high reliability and compact size of this module makes it suitable for mobile military and test applications.

PRODUCT DETAILS

Operating Frequency 3.3 - 3.8 GHz
Small Signal Gain 32 dBm
Small Signal Gain Flatness ± 1.5 d
Power Output 20 Watts
Adjacent Channel Power - 38 dBc
Operating Voltage 26 to 32 V
DC efficiency > 20%
Dimensions 165 x200 x 35 mm
RF Connectors SMA

GENERAL DESCRIPTION

A nominal 20 Watt (wideband) WiMAX & QPSK/QAM modulation scheme amplifier using GaN device technology operating over the full 3.3 to 3.8 GHz frequency band. The amplifier has a typical gain of 32dB (± 1.5 dB) over this range and achieves < 2.5% EVM when operating up to rated power with > 20% DC efficiency. Intended for use within indoor or outdoor equipment environments the unit operates over wide temperature extremes and incorporates internal protection systems to ensure reliable performance.

PRODUCT DETAILS

Operating Frequency 8.75 - 9.75 GHz
Power Output 40 Watts @ 8.75 - 9.75 GHz
Max Power Output 50 Watts @9.75 GHz
Operating Voltage +24 V DC
Supply Current 15 A
Duty Cycle Up to 50%
Control Interface 15-pin D-type
Dimensions 178 x 154 x 32 mm
RF Connectors SMA

GENERAL DESCRIPTION

This is a high power X-Band GaAs amplifier/source that provides excellent power density and long term reliability. This device provides 40W (46 dBm) of RF power with better than 1 dB linearity for 1 GHz within the operating frequency range and it is tunable across the band. The amplifier can be operated up to 50% duty cycle with switching frequencies as low as 10 Hz. The unit is light weight and designed for harsh environments making it suitable for mobile military and test applications.

PRODUCT DETAILS

Operating Frequency 1.35 - 1.525 GHz
Power Output @ P1dB 50 Watts
Gain Flatness 1.0 dB typical
Noise Figure 7.5 dB (max)
Gain 47 dB (typical)
Current Consumption 6A typical @ P1dB
Harmonics -25dBc
Enable Response Time 3.6 microsecond (max)
Efficiency @ 1P1dB 30% typical
dimensions 188 x 91.5 x 33 mm
RF Connectors 50 Ω SMA Jack

GENERAL DESCRIPTION

This is a narrowband LDMOS power amplifier that provides excellent power density, high efficiency and long term reliability. This devices provides 50 W (P1dB) of RF power over L-band, along
with an over temperature protection. The high reliability and
compact size of this module makes it suitable for mobile military
and communication applications.

PRODUCT DETAILS

Operating Frequency 20 - 520 MHz
Saturated Power 50 dBm
Efficiency @ P_sat 40%
Gain 50 dB
Gain Flatness (27.5 to 28.5V) ± 1.5db
Current Consumption @50 W 10 A typical
Dimensions 188 x 92 x 33 mm
RF Connectors 50 Ω SMA Jack

GENERAL DESCRIPTION

This broadband GaN power amplifier delivers a typical saturated output power (P_sat) of 100W over the frequency range 20MHz to 520MHz. It has been designed as a ‘commercial off the shelf’ product (COTS), providing high output powers with good overall efficiency.

PRODUCT DETAILS

Operating Frequency 13 -20 GHz
20 m Watts
Small Signal Gain Flatness 20 dB gain (minimum)
Noise Figure (narrowband) 2.6 dB (typical)
Operating Voltage 26 - 32V (26V default)
Supply Current 150 mA max
Dimensions 72 x 63 x 19 mm
RF Connectors K-type WR62 waveguide SMA optional

GENERAL DESCRIPTION

This is a broadband Ku band amplifier. This amplifier provides >20dB of gain, noise figure of 2.6dB with an output power of 12 dBm and can be customised for narrowband. It can also be provided with a WR62 waveguide input.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz
Saturated Power (P_sat) 48.4 dBm MIN
Efficiency @P_sat 35%
Gain 49 dB
Gain Flatness ± 1.5 dB
Current Consumption @50 W 6amp typical
Dimensions 188 x 91.5 x 33 mm
RF Connectors 50 Ω SMA Jack

GENERAL DESCRIPTION

This is a broadband GaN power amplifier that delivers a typical saturated output power (P_Sat) of 50W over the frequency range 0.5GHz to 2.5GHz. This amplifier is designed as a ‘commercial off the shelf’ product (COTS), providing high output powers with good overall efficiency.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz
Saturated Power (Psat) 50dBm
Small Signal Gain 53 dB min.
Input Power @Psat 5 dBm max.
Gain Flatness @rated output power  ± 1.0dB
Current Consumption @rated output power 15 Amp max.
Input Return Loss 10dB min.
Harmonics @rated output power-20 Dbc typ.
Operating Voltage 28 ± 2V 
Dimensions 261 x 131 x 31 mm
RF Connectors 50 Ω SMA Jack

GENERAL DESCRIPTION

Solid State Broadband High Power Amplifier

This is a broadband power amplifier that delivers a typical saturated output power (P sat) of 100W over the frequency range 0.5GHz to 2.5GHz. This amplifier is designed as a ‘commercial of the shelf’ product (COTS), providing high output powers with good overall efficiency.

PRODUCT DETAILS

Operating Frequency 8.5 - 9.3 GHz
Dual Power Output 30 Watts each side
Operating voltage 24V DC

GENERAL DESCRIPTION

X-band dual 50Watt amplifier. Suitable for EW systems

PRODUCT DETAILS

Operating Frequency 0.52 - 2.55 GHz
Saturated Power 48 dBm min
Efficiency @ P_sat 35%
Gain 50 dB
Gain flatness ± 1.5 dB
Current Consumption @ 60 W 6 A typical
Dimensions 188 x 91.5 x 33 mm
RF Connectors  50 Ω SMA Jack

GENERAL DESCRIPTION

This is a GaN broadband power amplifier that delivers a typical saturated output power (P_sat) of 60W over the frequency range 0.52GHz to 2.55GHz. This amplifier is designed as a ‘commercial off the shelf’ product (COTS), providing high output powers with good overall efficiency.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz
Saturated Power 50 Watts @P1dB
Efficiency @ P_sat 35%
Gain 49 dB
Gain flatness ± 1.5 dB
Current Consumption @ 50 W 6 A typical
Dimensions 188 x 91 x 33 mm
RF Connectors 50 Ω SMA Jack

GENERAL DESCRIPTION

This is a broadband LDMOS power amplifier that delivers a typical saturated output power (P_sat) of 70W over the frequency range 0.5GHz to 2.5GHz. This amplifier is designed as a ‘commercial off the shelf’ product (COTS), providing high output powers with good overall efficiency.

PRODUCT DETAILS

Operating Frequency 20 - 520 MHz
Saturated Power 125 Watts
Efficiency @ P_sat 50%
Gain 50 dB
Efficiency for P_sat output power
Dimensions 188 x 91. x 33 mm

GENERAL DESCRIPTION

This is a broadband power amplifier  that delivers a typical saturated output power (P_sat) of 125W over the frequency range 20 MHz to 520 MHz. This amplifier is designed as a 'commercial off the shelf' product (COTS), providing high output powers with good overall efficiency.

PRODUCT DETAILS

Operating Frequency 8.8 - 9.8 GHz
Power Output 30 Watts
Saturated Power (P_sat) 45dBm
Efficiency @P_sat 18%
Gain 34 dB
Gain Flatness ± 1 dB
Current Consumption @50 W 16.5 A
Dimensions 188 x 91.5 x 33 mm
RF Connectors 50 Ω SMA Jack

GENERAL DESCRIPTION

This is an X-Band 8.8 - 9.8 GHz, 35 Watt Power Amplifier that runs from a 10 - 12V power supply and consumes less than 18A. it is very compact in size and weighs less than 2kg with a provided heatsink.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz
Efficiency @ Psat 40%
Power Output @ Psat 25 Watts
Gain  @ 25 Watts 51 dB typ
Gain Flatness ± 2dB
Operating Voltage 28 V
Typical Supply Current @ Psat 3.0 Amp
Dimensions 120 x 65 x 25 mm
RF Connectors SMA

GENERAL DESCRIPTION

Amplifier type 8778 is a 0.5 GHz - 2.5 GHz broadband power amplifier designed using GaN technology which gives excellent power density, high efficiency and long term reliability. This device delivers a minimum RF power of 25W from below GSM, through to PCN/PCS and above. The high efficiency, lightweight and small footprint make this module particularly suitable for man portable applications.

PRODUCT DETAILS

Operating Frequency 2.5 6.0 GHz
Power Output @ PSat 25 Watts Min
Efficiency at 25W 15% Min.
Gain at 25W 47 dB typ
Gain Flatness ± 2 dB
Harmonic level < -10dBc
Max. Supply Current @ 25W 4.5 Amp,28V
Dimensions 65 x 120 x 25 mm
RF Connectors SMA

GENERAL DESCRIPTION

Amplifier type 8780 is a 2.5 - 6.0 GHz broadband power amplifier designed using GaN technology. This device delivers a minimum RF power of 25W and covers the higher mobile frequencies used in Wimax, 3G and 4G. The light weight and small footprint make this module particularly suitable for man portable applications.

PRODUCT DETAILS

Operating Frequency 25 - 500 MHz
Saturated Power 125 Watts
Operating Voltage 28V
Efficiency 
Gain 50 dB

GENERAL DESCRIPTION

This amplifier has a forward and reverse power measurement facility and is suitable for military electronic warfare applications.

PRODUCT DETAILS

Operating Frequency 850 - 1000 Mhz
Saturated Power 80 Watts
Operated Voltage 28V
Efficiency 
Gain 
Gain flatness 
Current Consumption

DESCRIPTION

Suitable for EW systems

PRODUCT DETAILS

Operating Frequency 1.7 - 2.2 GHz
Power Output 80 watts
Gain 
Operating Voltage 28V

GENERAL DESCRIPTION

This high power broadband GaN amplifier is suitable for EW systems.

PRODUCT DETAILS

Operating Frequency 0.02 - 6.0 GHz
Power Output @ P_sat 15-25 Watts min
Efficiency at 25W 15% min
Gain at 15W 40dB options available
Gain flatness ± 2 dB
Harmonic level < -10dBc
Max. Supply Current @ 15W 6 Amps max,50V
Dimensions 65 x 120 x 25 mm
RF Connectors SMA

GENERAL DESCRIPTION

Amplifier type 8790 is a 20 MHz - 6.0 GHz broadband power amplifier designed using GaN technology. This device delivers a minimum RF power of 25W and covers the higher mobile frequencies used in Wimax, 3G and 4G. The light weight and small footprint make this module particularly suitable for man portable applications.

PRODUCT DETAILS

Operating Frequency 417 - 437 MHz
Power Output 1 Watt (OFDM)
Gain 30 dB
Operating Voltage 12 V
Dimensions 85 x 50 x 18 mm

GENERAL DESCRIPTION

PRODUCT DETAILS

Operating Frequency 1.0 - 3.0 GHz
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency 
Gain 50dB
Gain flatness 
Current Consumption

GENERAL DESCRIPTION

This high efficiency GaN broadband amplifier is suitable for military electronic warfare applications.

PRODUCT DETAILS

Operating Frequency 1.43 - 1.54 GHz
Power Output 20 Watt P1
Gain 32 dB
Operating Voltage 28V

GENERAL DESCRIPTION

Complex waveform linear amplifier

PRODUCT DETAILS

Operating Frequency 0.8 - 1.0 GHz GaN
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency 
Gain 50dB
Gain flatness

DESCRIPTION

GaN technology high power amplifier, suitable for electronic warfare applications.

PRODUCT DETAILS

Operating Frequency 0.8 - 1.0 GHz LDMOS
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency
Gain

DESCRIPTION

Solid state powr amplifier that utilises LDMOS technology suitable for Electronic Counter Measures and Cellular Infrastructure.

PRODUCT DETAILS

Operating Frequency 1.8 - 2.2 GHz GaN
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency 
Gain 50dB
Gain flatness 
Current Consumption

Description

Suitable for military electronic warfare applications.

PRODUCT DETAILS

Operating Frequency 1.8 - 2.2 GHz LDMOS
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency 
LDMOS

GENERAL DESCRIPTION

Suitable for the high GSM band.

PRODUCT DETAILS

Operating Frequency 850 - 1000 MHz LDMOS
Power Output 25 watt 
Gain 30dB
Operating Voltage 28V

GENERAL DESCRIPTION

Suitable for EW systems

PRODUCT DETAILS

Operating Frequency 1.75 - 2.0 GHz LDMOS
Power Output 25 watt 
Gain 
Operating Voltage 

GENERAL DESCRIPTION

Suitable for military EW systems

PRODUCT DETAILS

Operating Frequency 2.0-2.8 GHz
Power Output 1 watt COFDM
Gain 30 dB
Small Signal 30dB
Operating Voltage 10-18V
DC Power 12V at 1.5A
Noise Figure 5dB
Dimensions 97 x 48 x 11 mm
RF Connectors SMA

GENERAL DESCRIPTION

1 watt COFDM output linear amplifier—ideal for battery powered outside broadcast cameras 400Mhz standard re-growth performance greater than –35dBc across the band. Harmonics greater than -40dBc across the band. Over temperature shutdown. Forward and reverse RF detectors. Output protection via circulator. Operating temperature –20 to +55oC

PRODUCT DETAILS

Operating Frequency 2.0 - 2.8 GHz
Power Output 5 watt COFDM
Small Signal 37dB or 20dB
Operating Voltage 10-30V
Gain 20 - 37 dB
DC Power 12V at 12A or 6A
Noise Figure 6dB
Dimensions 160 x 80 mm
RF Connectors SMA

GENERAL DESCRIPTION

5 watt COFDM output linear amplifier—ideal for battery powered outside broadcast cameras 400MHz standard re-growth performance greater than –30dBc (-36dBc for 20dB version) across the band (-34dBc typical). Harmonics greater than -50dBc across the band. Over temperature shutdown. Forward and reverse RF detectors. Output protection via circulator. Operating temperature –20 to +55oC.

PRODUCT DETAILS

Operating Frequency 20 - 1000 MHz
Power Output 100 Watt 
Gain 50dB
Operating Voltage 28V

GENERAL DESCRIPTION

This high efficiency GaN amplifier is suitable for electronic warfare jamming applications

PRODUCT DETAILS

Operating Frequency 2 - 18 GHz
Power Output 100 Watt
Gain 50dB

GENERAL DESCRIPTION

This is a broadband power amplifier that delivers a typical saturated output power (P_sat) of 100W over the frequency range of 2.0 - 18.0 GHz. The amplifier consists of a GaN 2-6 GHz unit combined with a 4.5 - 18 GHz TWT. Input frequency is split via a switch filter network to direct the appropriate signal to each amp.

PRODUCT DETAILS

Operating Frequency 1.215-1.4 GHz 1kW
Power Output 1Kw
Saturated Power (Psat) 60 dBm min
Gain 60dB
Gain at rated power 30-35 dB min 
Gain flatness @ rated output power  ± 1.25 dB
Duty 10%
Max pulse width 1000uS
Harmonics and surious power -60dBc
Operation temp base plate (temp monitor & alarm) + 10 to 70C (50mV/C)
Power supply 50V nominal
Dimensions 400 x 350 x 150 mm
RF connectors in/out SMA/N type
Reverse power protection Isolator
Efficiency 40%

GENERAL DESCRIPTION

This is an L-Band amplifier that delivers a typical saturated output power (P_sat) of 1kW over the frequency range 1.215 to 1.4 GHz. The unit has integrated reverse power protection, temperature monitor and over temperature protection.

The amplifier is suitable for radar and IFF applications. The amplifier operates utilising 50V GaN technology and is suitable for harsh environments.

PRODUCT DETAILS

Operating Frequency 0.8 - 2.2 GHz
Saturated Power 25 Watts
Operating Voltage 32V
Efficiency
Gain

DESCRIPTION

A dual amplifier driven by 2 inputs but having one output connector facilitated by an internal diplexer arrangement. Typical applications include Electronic Counter Measures.

PRODUCT DETAILS

Operating Frequency 20 - 500 MHz
Saturated Power - 100 Watts
Operating Voltage 28V
Efficiency
Gain

DESCRIPTION

High efficiency broadband GaN power amplifier, typical applications include Electronic Counter Measures.

PRODUCT DETAILS

Operating Frequency 2.2 - 6.0 GHz
Saturated Power 50 Watts
Operating Voltage
Efficiency
Gain 50 dB

DESCRIPTION

A broadband power amplifier utilising the latest GaN technology, typical applications include Electronic Counter Measures, Military and Commercial Communications, Test and Measurement Equipment, Fibre Drivers and EMC Amplifier Drivers.

PRODUCT DETAILS

Operating Frequency 0.5 - 2.5 GHz 50 Watts
Saturated Power
Operating Voltage 28 V
Efficiency
Gain

DESCRIPTION

This is a broadband amplifier that is designed as a commercial off the shelf product ('COTS').

PRODUCT DETAILS

Operating Frequency 20 - 520 MHz
Saturated Power - 200 Watts
Operating Voltage 28V
Efficiency
Gain

DESCRIPTION

A broadband high power amplifier that delivers a typical gain of 20dB over the frequency range of 20 MHz to 520 MHz. Used for Electronic Counter Measures.

PRODUCT DETAILS

Operating Frequency - 1215 - 1400 MHz
Saturated Power - 500 Watts
Operating Voltage 50V
Efficiency
Gain

GENERAL DESCRIPTION

An L-Band amplifier suitable for Pulsed Radar and IFF applications. The amplifier operates using 50V LDMOS technology and is suitable for harsh environments.

PRODUCT DETAILS

Operating Frequency 2.7 GHz - 3.15 GHz
Saturated Power 400 Watts
Operating Voltage 28 V
Efficiency
Gain

DESCRIPTION

This S Band amplifier operates over the frequency range 2.7 GHz - 3.15 GHz utilising GaN technology. Note - this product is subject to export control.

PRODUCT DETAILS

Operating Frequency 1.0 - 2.0 GHz
Saturated Power 50 Watts
Operating Voltage  28V
Efficiency
Gain

DESCRIPTION

A broadband high efficiency GaN amplifier, typical applications include Electronic Counter Measures.

PRODUCT DETAILS

Operating Frequency 20 - 800 MHz
Saturated Power 200 Watts
Operating Voltage 28V
Efficiency
Gain

DESCRIPTION

A high performance GaN amplifier delivering 200 Watts Psat across the band 20-800 MHz. The amplifier offers exceptional efficient performance in a small footprint. Typical applications include Electronic Counter Measures.

PRODUCT DETAILS

Operating Frequency 500 - 1000 MHz
Saturated Power 50 Watts
Operating Voltage
Efficiency
Gain

DESCRIPTION

PRODUCT DETAILS

Operating Frequency 20 - 1000 MHz
Saturated Power 25 Watts
Operating Voltage 24V
Efficiency
Gain 55 dB

DESCRIPTION

A high power linear amplifier that utilises LDMOS technology and is suitable for VHF and UHF transmitter applications as well as defence, test and radio applications.

PRODUCT DETAILS

Operating Frequency 1.0 - 3.0 GHz
Saturated Power 40 Watts
Operating Voltage 28V
Efficiency
Gain 48 dB

DESCRIPTION

This amplifier is designed as a 'commercial off the shelf' product (COTS), has current and temperature monitors (85C cut out) and can withstand poor mismatch conditions. Typical applications include Electronic Counter Measures and Linear band specific applications.

PRODUCT DETAILS

Operating Frequency 20 - 520 MHz
Power Output 50 watt 
Gain 50 dB
Operating Voltage 12 - 30V
Dimensions 260 x 100 x 45 mm

GENERAL DESCRIPTION

This VDMOS amplifier and detector with a frequency range of 20 - 50 MHz has a DC/AC converter and is suitable for military EW applications

PRODUCT DETAILS

Operating Frequency 20 - 500 MHz
Saturated Power - 100 Watts
Operating Voltage 28V
Efficiency
Gain 51 dB

DESCRIPTION

A pallet amplifier suitable for CW utilising the latest GaN on SiC technology with built in monitoring and protection circuits for current and temperture. Typical applications include Electronic Counter Measures, Cellular Infrastructure, Test and Measurement Equipment and PMR 2 Way radio.

PRODUCT DETAILS

Operating Frequency 2.2 - 6.0 GHz
Saturated Power 50 Watts
Operating Voltage 28 V
Efficiency
Gain

DESCRIPTION

This is a pallet amplifier suitable for CW and pulsed applications covering the frequency range 2.2 - 6.0 GHz.

PRODUCT DETAILS

Operating Frequency 0.8 - 1GHz
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency
Gain

DESCRIPTION

A pallet amplifier suitable for CW and pulsed applications delivering 100 Watts minimum saturated power, utilising the latest GaN on SiC technology.

PRODUCT DETAILS

Operating Frequency 1.7 - 2.2 GHz
Saturated Power 100 Watts
Operating Voltage 28V
Efficiency 
Gain

DESCRIPTION

A pallet amplifier suitable for CW and pulsed applications utilising the latest GaN technology.